?2013 fairchild semiconductor corporation 1 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt december 2013 fgh40n60smd_f085 600v, 40a field stop igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.9v(typ.) @ i c = 40a ? high input impedance ? tightened parameter distribution ? rohs compliant ? qualified to automotive requirements of aec-q101 general description using novel field stop igbt tec hnology, fairchild?s new series of field stop igbts offer the optimum performance for automotive chargers, inverter, and other applications where low conduction and switching losses are essential. applications ? automotive chargers, conver ters, high voltage auxiliaries ? inverters, smps,pfc, ups absolute maximum ratings thermal characteristics symbol description ratings units v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c80 a collector current @ t c = 100 o c40 a i cm (1) pulsed collector current 120 a i f diode forward current @ t c = 25 o c40 a diode forward current @ t c = 100 o c20 a i fm(1) pulsed diode maximum forward current 120 a p d maximum power dissipation @ t c = 25 o c 349 w maximum power dissipation @ t c = 100 o c 174 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c g e c e c g collector (flange) symbol parameter ratings un its r jc (ig b t) thermal resistance, junction to case 0. 43 o c / w r jc (diode) t herma l resistance, junction to case 1.8 o c / w r ja t herma l resistance, junction to ambient (pcb mount)(2) 45 o c / w ( 2) symbol parameter typ. un its
2 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt package marking and ordering information for fairchild?s definition of ?green? eco status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html . electrical characteristi cs of the igbt t c = 25c unless otherwise noted notes: 1:repetitive rating: pulse width limited by max junction temperature. 2:rthjc for to-247 : according to mil standard 883-1012 test me thod. rthja for to-247 : according to jesd51-2, test method environmental condition and jesd51-10, test boards for thro ugh hole perimeter leaded package thermal measurements. jesd51-3 : low effective thermal conductivi ty test board for leaded surface mount package. device marking device package packing type qty per tube fgh40n60smd fgh40n60smd_f085 to-247 tube 30ea symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250ua 600 - - v bv ces t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250ua -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ces at 80%*b vces, 175 o c - - 800 i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 3.5 4.5 6.0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -1.92.5v i c = 40a , v ge = 15v, t c = 175 o c -2.1- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1880 2500 pf c oes output capacitance - 180 240 pf c res reverse transfer capacitance - 50 65 pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15v, inductive load, t c = 25 o c -1824ns t r rise time - 28 36.4 ns t d(off) turn-off delay time - 110 143 ns t f fall time - 13.2 18.5 ns e on turn-on switching loss - 0.92 1.2 mj e off turn-off switching loss - 0.3 0.39 mj e ts total switching loss - 1.22 1.59 mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15v, inductive load, t c = 175 o c - 16.7 23.8 ns t r rise time - 27 35.1 ns t d(off) turn-off delay time - 116 151 ns t f fall time - 56.5 81 ns e on turn-on switching loss - 1.47 1.91 mj e off turn-off switching loss - 0.73 0.95 mj e ts total switching loss - 2.20 2.86 mj
3 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt electrical characteristi cs of the igbt (continued) electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max units q g total gate charge v ce = 400v, i c = 40a, v ge = 15v - 119 180 nc q ge gate to emitter charge - 13 20 nc q gc gate to collector charge - 58 90 nc symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 20a t c = 25 o c- 2.3 2.8 v t c = 175 o c- 1.67 - e rec reverse recovery energy i f =20a, di f /dt = 200a/ s t c = 175 o c - 48.9 - uj t rr diode reverse recovery time t c = 25 o c - 36 47 ns t c = 175 o c- 110 - q rr diode reverse recovery charge t c = 25 o c - 46.8 61 nc t c = 175 o c - 470 -
4 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0246810 0 20 40 60 80 100 120 8v v ge = 20v t c = 25 o c 15 v 12v 10 v collector current, i c [a] collector-emitter voltage, v ce [v] 0246810 0 20 40 60 80 100 120 8v v ge = 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 20 40 60 80 10 0 12 0 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1 2 3 40a 80a i c = 20 a common emitter v ge = 15v collect or-emitter v olt age , v ce [v] collector-emitt ercase temperature, t c [ o c] 4 8 12 16 2 0 0 4 8 12 16 20 i c = 20a 80a 40a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
5 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resi stance 4 8 12 16 2 0 0 4 8 12 16 20 i c = 20 a 80a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 48121620 0 4 8 12 16 20 i c =20a 80a 40a common emitter t c = 175 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 110 50 100 10 00 40 00 common emitter v ge = 0v, f = 1m hz t c = 25 o c c re s c oes c ies capacitance [pf] collec tor-e mi tt er voltage , v ce [v] 30 050100120 0 3 6 9 12 15 300v common emitter t c = 25 o c v cc = 200v 40 0 v gate-emitter voltage, v ge [v] ga te cha rge, q g [nc] 1 1 0 1 00 10 00 0.1 1 10 100 300 1ms 10 ms dc *no tes: 1. t c = 25 o c 2. t j 175 o c 3. sin gle pulse 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 1 10 100 switching time [ns] c ommon emitter v cc = 400v, v ge = 1 5v i c = 40a t c = 25 o c t c = 175 o c t d (on) t r gate resistance, r g [ ]
6 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 1020304050 10 100 100 0 10000 switching time [ns] common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(of f) t f gate resistance, r g [ ] 20 40 60 80 1 10 100 co mmon emitter v ge = 15v, r g = 6 t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 20 40 60 80 1 10 10 0 1000 common emi tter v ge = 15v, r g = 6 t c = 25 o c t c = 175 o c t d(of f) t f switching time [ns] collector current, i c [a] 0 1020304050 0.1 1 10 100 co mmon emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gat e res ist ance, r g [ ] 20 40 60 80 0.1 1 10 common emitter v ge = 15v, r g = 6 t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 1 1 10 100 200 sa f e op er at in g are a v ge = 15v, t c 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
7 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt typical performance characteristics figure 20. load current vs. frequency figure 21. forward characteristics figure 22. reverse current figure 23. stored charge figure 24. reverse recovery time 0123 1 10 100 t c = 175 o c t c = 25 o c forward voltage, v f [v] forward current, i f [a] 0 200 400 600 0.01 0.1 1 10 100 1000 t c = 25 o c t c = 100 o c t c = 175 o c reverse current i ces [ua] c ollector to emitter voltage, v ces [v] 0 5 10 15 20 25 30 35 40 45 0 10 0 20 0 30 0 40 0 50 0 60 0 di/dt = 100a/ s di/dt = 200a/ s t c = 25 o c t c = 175 o c s tored recove ry charge , q rr [nc] forwad current, i f [a] 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 t c = 25 o c t c = 175 o c di /d t = 100a / s 200a/ s di/dt = 100a/ s 200a/ s reverse recovery time, t rr [ns] forward current, i f [a] figure 19. current derating 0 255075100125150175 0 10 20 30 40 50 60 70 80 90 collector current, i c [a] collector-em itt er case te mperature , t c [ o c] 1 k 1 0 k 1 0 0 k 1 m 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 1 1 0 1 2 0 t c = 7 5 o c s q u a r e w a v e t j < 1 7 5 o c , d = 0 . 5 , v c e = 4 0 0 v v g e = 1 5 / 0 v , r g = 6 w c o l l e c t o r c u r r e n t , i c [ a ] s w i t c h i n g f r e q u e n c y , f [ h z ] t c = 1 0 0 o c
8 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt figure 25. transient thermal im pedance of igbt figure 26.transient thermal impedance of diode 1e-5 1e-4 1e -3 0.01 0.1 1e- 3 0.01 0.1 0.5 0.01 0.02 0.1 0.05 0.2 singl e pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0. 5 t 1 p dm t 2 1e-5 1e-4 1e-3 0.01 0.1 1 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
9 www.fairchildsemi.com fgh40n60smd_f085 rev. c1 fgh40n60smd_f085 600v 40a field stop igbt mechanical dimensions to - 247ab (fks pkg code 001)
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